肉类解冻工艺研究进展

解冻是肉类加工或烹饪前的重要步骤，不恰当的解冻工艺会导致肉类品质的劣变，因此，开发高效益的解冻工艺是十分必要的。解冻工艺的发展在经历了传统工艺、新型工艺后，近年又涌现了一些独特且具有创新性的解冻工艺。本文除简要概括肉品解冻过程及常见解冻工艺之外，综述这些独特的解冻工艺，介绍其开发思路、解冻原理和相关研究内容，并对未来解冻工艺的发展提出建议，旨在为肉及肉制品解冻工艺的选择和优化提供参考。     

建设工程施工企业质量管理实践

建筑工程质量安全是施工企业管理的底线和红线。结合中铁建设集团有限公司近些年在质量管理方面的心得和经验,从施工企业的制度建设、标准化建设、管控手段、人员素质提升、创优创誉等方面,探讨建筑施工企业的质量管理。     

汽车涂装技术发展趋势及中国汽车涂装的对策

对汽车涂装面临的挑战、汽车涂装技术的发展趋势及最新进展进行了总结,概述了中国汽车涂装现状,并为促进汽车清洁涂装技术水平的提高提出了相应的对策。     

矿井隔水关键层机理与防治水技术

为了提高矿井防治水技术的水平,介绍了隔水关键层的概念、模式、分类、影响因素、隔水关键层机理,针对水害中最常见的两种奥灰水害和采空区水害进行了相关防水技术的讨论。最后,就采煤行业的流程＂巷道掘进阶段-工作面回采前-工作面回采过程＂整体上论述了如何根据隔水层机理应用防治水技术。     

综采工作面过辅助运输联络斜巷关键技术研究

为了提高综采工作面安全高效生产,以东滩煤矿143下04综采工作面回采过程中过142运输巷2号辅助运输联络斜巷为背景,在工程实践中主要采用了加强顶板管理、加强截割层位控制以及加强设备管理等关键技术,工作面在生产过程中未出现顶板冒落、掉顶现象,安全稳定的通过辅助运输联络斜巷穿层区域,为综采工作面安全高效的生产积累了经验。     

阳煤矿区15号煤开采中关键层对初采瓦斯的影响

基于阳煤矿区15号煤层因开采深度和强度增加,初采期工作面瓦斯突出的问题,依据砌体梁理论与关键层理论分析了上覆岩层破坏对工作面瓦斯涌出量的影响,提出了采用初采瓦斯治理巷的技术方法,并在工程现场对15号煤层工作面初采期瓦斯进行工程试验治理,对瓦斯抽放量和工作面瓦斯涌出量进行监测。结果表明：综放面采用初采瓦斯处理巷,可及时有效地排放占初采期86.25%~90.29%的上临近层瓦斯,降低了风排瓦斯量,消除了初采期瓦斯超限隐患,实现了安全、高效生产。     

雨水排水体系构建和技术发展重点的综述

该文介绍了国际通行的雨水排水体系构架,阐述了“小排水系统”和“大排水系统”的定义,分析了两者在防汛除涝方面的关系。     

醚化蒸馏塔设计总结

大连石化公司汽油质量升级100万t/a轻汽油醚化装置醚化蒸馏塔具有塔内装有填料和塔盘、外形尺寸大、变径以及由于物料反应介质腐蚀性较大的特点,正确的设计对于醚化蒸馏塔的长周期安全使用具有重要意义。阐述了醚化蒸馏塔的主体材料选用、结构型式和制造安装技术要求编制等方面的设计要点。     

Overview of emerging nonvolatile memory technologies

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.